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dg858bw45 1/19 dg858bw45 repetitive peak off-state voltage v drm v features l double side cooling l high reliability in service l high voltage capability l fault protection without fuses l high surge current capability l turn-off capability allows reduction in equipment size and weight. low noise emission reduces acoustic cladding necessary for environmental requirements applications l variable speed a.c. motor drive inverters (vsd-ac) l uninterruptable power supplies l high voltage converters l choppers l welding l induction heating l dc/dc converters key parameters i tcm 3000a v drm 4500v i t(av) 1180a dv d /dt 1000v/ m s di t /dt 300a/ m s package outline type code: w. see package details for further information. voltage ratings 4500 conditions type number t vj = 125 o c, i dm = 100ma, i rrm = 50ma repetitive peak reverse voltage v rrm v 16 current ratings symbol parameter conditions max. i tcm t hs = 80 o c. double side cooled, half sine 50hz v d = 66% v drm , t j = 125 o c, di gq /dt = 40a/ m s, cs = 3 m f rms on-state current a a a 3000 1180 1850 units repetitive peak controllable on-state current t hs = 80 o c. double side cooled, half sine 50hz i t(rms) i t(av) mean on-state current figure 1. package outline dg858bw45 gate turn-off thyristor ds4096-5 july 2014 (ln31733)
dg858bw45 2/19 surge ratings conditions 20.0 2.0 x 10 6 ka a 2 s surge (non-repetitive) on-state current i 2 t for fusing 10ms half sine. t j = 125 o c 10ms half sine. t j =125 o c di t /dt critical rate of rise of on-state current 300 130 v/ m s max. units rate of rise of off-state voltage dv d /dt 1000 v/ m s to 66% v drm ; v rg = -2v, t j = 125 o c i tsm symbol parameter i 2 t v d = 3000v, i t = 3000a, t j = 125 o c, i fg > 40a, rise time > 1.0 ms a/ ms to 66% v drm ; r gk 1.5 w , t j = 125 o c gate ratings symbol parameter conditions v units max. 16 20 min. - 20 - peak reverse gate voltage peak forward gate current average forward gate power peak reverse gate power rate of rise of reverse gate current minimum permissable on time minimum permissable off time 24 60 -50 20 - - m s 100 100 v rgm this value maybe exceeded during turn-off i fgm p fg(av) p rgm di gq /dt t on(min) t off(min) ms a/ ms kw w a thermal and mechanical data symbol parameter conditions max. min. r th(c-hs) contact thermal resistance r th(j-hs) - - 0.03 - 0.0021 o c/w per contact cathode side cooled double side cooled units - 0.011 o c/w anode side cooled o c/w 0.017 virtual junction temperature t op /t stg operating junction/storage temperature range - clamping force -40 125 44.0 36.0 -40 kn o c/w clamping force 40.0kn with mounting compound dc thermal resistance - junction to heatsink surface t vj 125 o c o c - - peak stray inductance in snubber circuit i t = 3000a, v d = v drm , t j = 125c, di/ gq = 40a/ ms, cs = 3.0 mf l s 200 nh
dg858bw45 3/19 characteristics conditions peak reverse current on-state voltage v tm peak off-state current reverse gate cathode current 50- turn-on energy gate trigger current delay time rise time fall time gate controlled turn-off time turn-off energy storage time turn-off gate charge total turn-off gate charge peak reverse gate current - 12000 v rgm = 16v, no gate/cathode resistor mc i t = 3000a, v dm = v drm snubber cap cs = 3.0 mf, di gq /dt = 40a/ ms t j = 125 o c unless stated otherwise symbol parameter i dm i rrm v gt gate trigger voltage i gt i rgm e on t d t r e off t gs t gf t gq q gq q gqt i gqm min. max. units - 4.0 v v drm = 4500v, v rg = 0v - 100 ma at v rrm -50ma v d = 24v, i t = 100a, t j = 25 o c - 1.2 v v d = 24v, i t = 100a, t j = 25 o c - 4.0 a ma mj 2700- v d = 2000v i t = 3000a, di t /dt = 300a/ ms i fg = 40a, rise time < 1.0 ms m s2.0- - 6.0 m s - 13500 mj - 25.0 ms m s2.5- m s27.5- - 24000 mc - 950 a at 4000a peak, i g(on) = 10a d.c.
dg858bw45 4/19 curves -50 -25 0 25 50 75 100 125 0.5 1.0 1.5 2.0 gate trigger voltage v gt - (v) 12.5 10.0 7.5 5.0 2.5 gate trigger current i gt - (a) junction temperature t j - (c) v gt i gt 0 150 2.5 0 figure 2. maximum gate trigger voltage/current vs junction temperature 1.5 2.0 2.5 3.0 3.5 instantaneous on-state voltage v tm - (v) 1000 2000 3000 4000 instantaneous on-state current i t - (a) measured under pulse conditions. i g(on) = 10a half sine wave 10ms 0 4.0 1.0 t j = 125c t j = 25c figure 3. on-state characteristics
dg858bw45 5/19 0 2.0 4.0 6.0 snubber capacitance c s - (f) 1000 2000 4000 3000 maximum permissible turn-off current i tcm - (a) conditions: t j = 125c, v dm = v drm di gq /dt = 40a/s 1.0 3.0 5.0 3500 2500 1500 figure 4. maximum dependence of i tcm on cs 0 0.005 0.010 0.015 0.001 0.01 0.1 1.0 10 time - (s) thermal impedance - c/w dc 100 figure 5. maximum (limit) transient thermal impedance - double side cooled 0 10 20 30 0.0001 0.001 0.01 0.1 1.0 pulse duration - (s) peak half sine wave on-state current - (ka) 40 50 figure 6. surge (non-repetitive) on-state current vs time
dg858bw45 6/19 0 500 1000 1500 60 70 80 90 100 110 maximum permissible case temperature - (c) mean on-state current i t ( av ) - (a) 0 500 1000 1500 2000 2500 3000 3500 4000 mean on-state power dissipation - (w) 180 120 60 30 dc conditions; i g(on) = 10a 120 130 4500 5000 5500 figure 7. steady state rectangular wave conduction loss - double side cooled 0 400 800 80 90 100 maximum permissible case temperature - (c) mean on-state current i t(av) - (a) 0 500 1000 1500 2000 2500 3000 mean on-state power dissipation- (w) 180 120 60 30 90 conditions; i g(on) = 10a 1200 110 120 130 200 600 1000 3500 4000 figure 8. steady state sinusoidal wave conduction loss - double side cooled
dg858bw45 7/19 0 500 1000 1500 2000 2500 on-state current i t - (a) 0 500 1000 1500 2000 2500 3000 3500 4000 turn-on energy loss e on - (mj) 3000 v d = 3000v v d = 2000v v d = 1000v conditions: t j = 25c i fgm = 40a c s = 3f r s = 10 ohms di t /dt = 300a/s di fg /dt = 40a/s 4500 figure 9. turn-on energy vs on-state current 0 1020304050607080 peak forward gate current i fgm - (a) 0 1000 2000 3000 4000 5000 6000 7000 8000 turn-on energy loss e on - (mj) conditions: i t = 3000a, t j = 25c, c s = 3.0f, r s = 10 ohms di t /dt = 300a/s, di fg /dt = 40a/s v d = 3000v v d = 2000v v d = 1000v figure 10. turn-on energy vs peak forward gate current
dg858bw45 8/19 0 500 1000 1500 2000 3000 2500 on-state current i t - (a) 0 500 1000 1500 2000 2500 3000 turn-on energy loss e on - (mj) conditions: t j = 125c i fgm = 40a c s = 3.0f r s = 10 ohms di t /dt = 300a/s di fg /dt = 40a/s v d = 1000v 3500 4000 4500 v d = 2000v v d = 3000v figure 11. turn-on energy vs on-state current 0 1020304050607080 peak forward gate current i fgm - (a) 0 1000 2000 3000 4000 5000 6000 7000 8000 turn-on energy loss e on - (mj) 9000 10000 conditions: i t = 3000a t j = 125c c s = 3.0f r s = 10 ohms di t /dt = 300a/s di fg /dt = 40a/s v d = 2250v v d = 2000v v d = 1000v figure 12. turn-on energy vs peak forward gate current 50 100 150 200 250 300 350 rate of rise of on-state current di t /dt - (a/s) 0 1000 2000 3000 4000 turn-on energy loss e on - (mj) conditions: i t = 3000a t j = 125c c s = 3.0f r s = 10 ohms i fgm = 40a di fg /dt = 40a/s 5000 v d = 1000v 4500 3500 2500 1500 500 v d = 2000v v d = 3000v figure 13. turn-on energy vs rate of rise of on-state current
dg858bw45 9/19 0 500 1000 1500 2000 3000 2500 on-state current i t - (a) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 turn-on delay time and rise time - (s) conditions: t j = 125c, i fgm = 40a c s = 3.0f, r s = 10 ohms, di t /dt = 300a/s, v d = 2000v t d t r fig.ure 14. delay and rise time vs on-state current 0 1020304050607080 peak forward gate current i fgm - (a) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 turn-on delay time and rise time - (s) 10.0 11.0 conditions: i t = 3000a t j = 125c c s = 3.0f r s = 10 ohms di t /dt = 300a/s di fg /dt = 40a/s v d = 2000v t d t r 12.0 figure 15. delay and rise time vs peak forward gate current
dg858bw45 10/19 0 500 1000 1500 2000 3000 2500 on-state current i t - (a) 0 1000 2000 3000 4000 5000 6000 turn-off energy loss e off - (mj) conditions: t j = 25c c s = 3.0f di gq /dt = 40a/s 7000 8000 a: v dm = 100% v drm b: v dm = 75% v drm c: v dm = 50% v drm 9000 a b c a figure 16. turn-off energy loss vs on-state current 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt- (a/s) 4000 4500 5000 5500 6000 6500 7000 7500 8000 turn-off energy per pulse e off - (mj) conditions: i t = 3000a t j = 25c c s = 3.0f 8500 9000 v dm = 100% v drm v dm = 75% v drm v dm = 50% v drm figure 17. turn-off energy vs rate of rise of reverse gate current
dg858bw45 11/19 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 0 2000 4000 6000 8000 10000 12000 turn-off energy loss e off - (mj) conditions: t j = 125c c s = 3.0f di gq /dt = 40a/s a: v dm = 100% v drm b: v dm = 75% v drm c: v dm = 50% v drm 14000 a b c figure 18. turn-off energy vs on-state current 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt- (a/s) 6000 8000 10000 12000 14000 turn-off energy per pulse e off - (mj) conditions: i t = 3000a t j = 125c c s = 3.0f 13000 11000 9000 7000 v dm = 100% v drm v dm = 75% v drm v dm = 50% v drm figure 19. turn-off energy loss vs rate of rise of reverse gate current
dg858bw45 12/19 14000 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 0 2000 4000 6000 8000 10000 12000 turn-off energy per pulse e off - (mj) conditions: t j = 125c v dm = v drm di gq /dt = 40a/s c s = 2.0f c s = 2.5f c s = 3.0f c s = 4.0f 16000 3500 figure 20. turn-off energy vs on-state current 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 2.5 7.5 12.5 17.5 gate storage time t gs - (s) conditions: c s = 3.0f di gq /dt = 40a/s t j = 25c t j = 125c 22.5 5.0 10.0 15.0 20.0 25.0 figure 21. gate storage time vs on-state current
dg858bw45 13/19 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt - (a/s) 15.0 20.0 25.0 30.0 35.0 gate storage time t gs - (s) 40.0 conditions: i t = 3000a c s = 3.0f t j = 125c t j = 25c figure 22. gate storage time vs rate of rise of reverse gate current 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 1.0 2.0 3.0 gate fall time t gf - (s) conditions: c s = 3.0f di gq /dt = 40a/s t j = 25c t j = 125c 0 figure 23. gate fall time vs on-state current
dg858bw45 14/19 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt - (a/s) 1.0 1.5 2.0 2.5 3.0 gate fall time t gf - (s) conditions: i t = 3000a c s = 3.0f t j = 125c t j = 25c figure 24. gate fall time vs rate of rise of reverse gate current 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 200 400 600 800 peak reverse gate current i gqm - (a) conditions: c s = 3.0f di gq /dt = 40a/s t j = 125c 1000 900 700 500 300 t j = 25c figure 25. peak reverse gate current vs on-state current
dg858bw45 15/19 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt - (a/s) 600 700 800 900 peak reverse gate current i gqm - (a) 1000 conditions: i t = 3000a c s = 3.0f t j = 125c t j = 25c figure 26. reverse gate current vs rate of rise of reverse gate current 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 0 4000 8000 12000 total turn-off gate charge q gq - (c) conditions: c s = 3.0f di gq /dt = 40a/s t j = 125c t j = 25c 2000 6000 10000 figure 27. turn-off gate charge vs on-state current
dg858bw45 16/19 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt - (a/s) 7000 9000 11000 13000 15000 turn-off gate charge q gq - (c) conditions: i t = 3000a c s = 3.0f t j = 125c t j = 25c 8000 10000 12000 14000 figure 28. turn-off gate charge vs rate of rise of reverse gate current 0 500 1000 rate of rise of off-state voltage dv/dt - (v/s) gate cathode resistance r gk - (ohms) v d = 3000v v d = 2250v t j = 125c 0.1 1.0 10 100 1000 figure 29. rate of rise of off-state voltage vs gate cathode resistance
dg858bw45 17/19 anode voltage and current v d 0.9v d 0.1v d t d t r t gt i t v dp 0.9i t i tail dv d /dt v d v dm gate voltage and current t gs t gf t w1 v fg i fg 0.1i fg di fg /dt 0.1i gq q gq 0.5i gqm i gqm v rg v (rg)br i g(on) t gq recommended gate conditions: i tcm = 3000a i fg = 40a i g(on) = 10a d.c. t w1(min) = 20s i gqm = 950a di gq /dt = 40a/s q gq = 12000c v rg(min) = 2v v rg(max) = 16v these are recommended d y nex semiconductor conditions. other conditions are permitted figure 30. general switching waveforms
dg858bw45 18/19 package details for further package information, please contact your local customer service centre. all dimensions in mm, unless stated otherwise. do not scale. 72 max ?84.6 nom ?84.6 nom ?120 max 27.0 25.5 cathode anode gate connector ?3.0 auxiliary cathode connector ?3.0 12 2 holes ?3.6 x 2.0 deep (one in each electrode) nominal weight: 1700g clamping force: 40kn 10% lead double coax, length: 630mm package outine type code: w associated publications title application note number calculating the junction temperature or power semiconductors an4506 gto gate drive units an4571 recommendations for clamping power semiconductors an4839 use of v to , r t on-state characteristic an5001 impoved gate drive for gto series connections an5177
important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographica l errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. the annotations are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .

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